PdIn contacts ton‐type andp‐type GaP

Low resistance ohmic contacts on wide band-gap GaN

We report a new metallization process for achieving low resistance ohmic contacts to molecular beam epitaxy grown n-GaN (--Or7 cme3) using an Ah% bilayer metallization scheme. Four different thin-film contact metallizations were compared during the investigation, including Au, Al, Ti/Au, and Ti/Al layers. The metals were first deposited via conventional electron-beam evaporation onto the GaN su...

Structural, thermal and deformation-induced point defects in PdIn

Perturbed angular correlation of gamma rays (PAC) was applied to measure concentrations of point defects in quenched and milled intermetallic compounds. Two systems with high ordering energies were studied, PdIn and NiAl, with principal results obtained for PdIn. The defects, lattice vacancies and antisite atoms, were detected by quadrupole interactions induced at nuclei of nearby In/Cd probe a...

AIAA 2004-0821 Thermal Resistances of Gaseous Gap for Conforming Rough Contacts

An approximate analytical model is developed for predicting the heat transfer of interstitial gases in the gap between conforming rough contacts. A simple relationship for the gap thermal resistance is derived by assuming that the contacting surfaces are of uniform temperature and that the gap heat transfer area and the apparent contact area are identical. The model covers the four regimes of g...

AIAA 2004-0822 Thermal Resistances of Gaseous Gap for Non-Conforming Rough Contacts

An approximate analytical model is developed for predicting the thermal contact resistance of spherical rough solids with the presence of interstitial gases. The joint resistance includes four thermal resistances, i.e., macrogap, microgap, macrocontact, and microcontacts. Simple relationships are derived for each component of the joint resistance assuming contacting surfaces are of uniform temp...

Contacts & Correspondence